FQA6N90C-F109 ON | ON agency

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Mfr. #：

FQA6N90C-F109

Mfr.:

ON Semiconductor

Batch:

23+

Description:

MOSFET 900V N-Ch Q-FET advance C-Series

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Technology	Si
Mounting Style	Through Hole
Package/Case	TO-3PN-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds-Drain-Source Breakdown Voltage	900 V
Id-Continuous Drain Current	6 A
Rds On-Drain-Source On-Resistance	2.3 Ohms
Vgs - Gate-Source Voltage	- 30 V, 30 V
Vgs th-Gate-Source Threshold Voltage	3 V
Qg-Gate Charge	40 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	150 C
Pd-Power Dissipation	198 W
Channel Mode	Enhancement
Qualification
Trade Name	QFET
Package	Tube

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