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FQA6N90C-F109 Image

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Mfr. #:
FQA6N90C-F109
Mfr.:
ON Semiconductor
Batch:
23+
Description:
MOSFET 900V N-Ch Q-FET advance C-Series
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Technology Si
Mounting Style Through Hole
Package/Case TO-3PN-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds-Drain-Source Breakdown Voltage 900 V
Id-Continuous Drain Current 6 A
Rds On-Drain-Source On-Resistance 2.3 Ohms
Vgs - Gate-Source Voltage - 30 V, 30 V
Vgs th-Gate-Source Threshold Voltage 3 V
Qg-Gate Charge 40 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature 150 C
Pd-Power Dissipation 198 W
Channel Mode Enhancement
Qualification
Trade Name QFET
Package Tube
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