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NSVBCP68T1G Image

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Mfr. #:
NSVBCP68T1G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
This NPN bipolar transistor is suitable for low voltage and high current applications. This device is housed in a SOT-223 package and is suitable for medium power surface mount applications.
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog BJT
Transistor Type NPN
Collector-Emitter Breakdown Voltage(Vceo) 20V
Collector Current(Ic) 1A
Power(Pd) 1.5W
Collector Cutoff Current(Icbo) 10uA
Collector-Emitter Saturation Voltage(VCE(sat)@Ic,Ib) 500mV@1A,100mA
DC Current Gain(hFE@Ic,Vce) 85@500mA,1V
Characteristic Frequency(fT) 60MHz
Operating Temperature -65℃~ 150℃@(Tj)
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