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H11AA4SR2M Image

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Mfr. #:
H11AA4SR2M
Mfr.:
ON Semiconductor
Batch:
23+
Description:
The H11AAXM series consists of two GaAs infrared emitting diodes connected in anti-phase parallel to drive a single silicon phototransistor output.
Datasheet:
In Stock:
980
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Optocoupler-Phototransistor output
Input voltage type AC,DC
Output type Phototransistor
Number of output channels 1
Forward voltage 1.17V
Reverse voltage -
Output current 50mA
Receiving end voltage 100V
Collector-emitter saturation voltage (Vce(sat)@Ic,IF) -
Rise time -
Fall time -
Isolation voltage (rms) 4.17kV
Operating temperature -40℃~ 100℃
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