FOD817D300W

The FOD814 contains two GaAs infrared emitting diodes in a 4-pin dual-wire package, connected in anti-parallel, driving a silicon phototransistor output. The FOD817 series contains one GaAs infrared emitting diode in a 4-pin dual-wire package, driving a silicon phototransistor output.

H11A1VM

This general purpose optocoupler consists of a GaAs infrared emitting diode driving a silicon phototransistor in a 6-lead dual in-line package.

H11AA4SR2VM

The H11AAXM series consists of two GaAs infrared emitting diodes connected in anti-phase parallel to drive a single silicon phototransistor output.

MOCD217R2VM

The MOCD217M device consists of two GaAs infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors in a small surface mount plastic package. It is suitable for high density applications without the need for through board mounting.

H11F3SVM

The H11FXM series consists of a GaAIS IRED light emitting diode optically coupled to a symmetrical bidirectional silicon photodetector. The detector is insulated from the input and functions like an ideal isolated FET, designed for distortion-free control of low level AC and DC analog signals.

TIL117VM

The MOC8100, TIL111, and TIL117 optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-lead dual-inline package.

TIL113SM

The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M feature a GaAs infrared emitting diode optically coupled to a silicon epitaxial planar photodarlington.

4N38SM

The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor type optically coupled optoisulators. A gallium arsenide infrared emitting diode is coupled to a high voltage NPN silicon phototransistor. The device is available in a standard plastic six-pin dual in-line package.