LOGO
LOGO
FDMC9430L-F085 Image

img for reference only

Mfr. #:
FDMC9430L-F085
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Transistor: N-MOSFET x2; unipolar; 40V; 12A; 11.4W; Power33
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer ONSEMI
Transistor Type N-MOSFET x2
Polarization Unipolar
Drain-Source Voltage 40V
Drain Current 12A
Power Consumption 11.4W
Package Power33
Gate-Source Voltage ±12V
On-State Resistance 13mΩ
Mounting Method SMD
Gate Charge 22nC
Packaging Type Reel, Tape
Channel Type Enhancement
Related models
  • PN3563_D26Z

    RF Transistor NPN 15V 50mA 1.5GHz 350mW Through Hole TO-92-3

  • PN3563_D74Z

    RF Transistor NPN 15V 50mA 1.5GHz 350mW Through Hole TO-92-3

  • PN3563_D75Z

    RF Transistor NPN 15V 50mA 1.5GHz 350mW Through Hole TO-92-3

  • PN5179_D26Z

    RF Transistor NPN 12V 50mA 2GHz 350mW Through Hole TO-92-3

  • PN5179_D27Z

    RF Transistor NPN 12V 50mA 2GHz 350mW Through Hole TO-92-3

  • PN5179_D75Z

    RF Transistor NPN 12V 50mA 2GHz 350mW Through Hole TO-92-3

  • PN918_D74Z

    RF Transistor NPN 15V 50mA 600MHz 350mW Through Hole TO-92-3

  • KSE182STU

    Transistor - Bipolar (BJT) - Single NPN 80 V 3 A 50MHz 1.5 W Through Hole TO-126-3

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd