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PN5179_D26Z Image

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Mfr. #:
PN5179_D26Z
Mfr.:
ON Semiconductor
Batch:
23+
Description:
RF Transistor NPN 12V 50mA 2GHz 350mW Through Hole TO-92-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Packaging Tape and Reel (TR)
Transistor Type NPN
Voltage - Collector Emitter Breakdown (max) 12V
Frequency - Transition 2GHz
Noise Figure (dB, typical at f) 5dB @ 200MHz
Gain 15dB
Power - max 350mW
DC Current Gain (hFE) (min) at Ic, Vce? 25 @ 3mA, 1V
Current - Collector (Ic) (max) 50mA
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package/Case TO-226-3, TO-92-3 (TO-226AA)Formed Lead
Supplier Device Package TO-92-3
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