LOGO
LOGO
FCPF16N60 Image

img for reference only

Mfr. #:
FCPF16N60
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer ONSEMI
Transistor Type N-MOSFET
Technology SJ-MOSFET
Polarization Unipolar
Drain-Source Voltage 600V
Drain Current 10.1A
Pulsed Drain Current 48A
Power Consumption 37.9W
Package TO220F
Gate-Source Voltage ±30V
On-State Resistance 260mΩ
Mounting Method THT
Gate Charge 70nC
Package Type Tube
Channel Type Enhancement
Related models
  • BAS20LT3G

    This high voltage switching diode is suitable for high voltage, high speed switching applications. This dual diode device contains two electrically isolated high voltage switching diodes in a SOT-23 surface mount package.

  • M1MA151WAT1G

    This common anode switching diode is suitable for ultra-high speed switching applications. This device is available in SC-59 package for low power surface mount applications.

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd