LOGO
LOGO
MMSD914T1 Image

img for reference only

Mfr. #:
MMSD914T1
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Switching diode
Diode configuration Standalone
DC reverse withstand voltage (Vr) 100V
Average rectified current (Io) 200mA
Forward voltage drop (Vf) 1V@10mA
Reverse current (Ir) 5uA@75V
Reverse recovery time (trr) 4ns
Related models
  • MMBT2222LT1G

    This NPN bipolar transistor is suitable for linear and switching applications. This device is available in a SOT-23 package for low power surface mount applications.

  • NSV1C201LT1G

    Low VCE(sat) bipolar transistors are miniature surface mount devices with ultra-low saturation voltage VCE(sat) and high current gain capability. These devices are designed for low voltage, high speed switching applications requiring economical and efficient energy control.

  • MMBT4124LT1G

    This NPN bipolar transistor is suitable for linear and switching applications. This device is available in a SOT-23 package for low power surface mount applications.

  • NSVMMBTH10LT1G

    This NPN Bipolar Transistor is designed for general purpose VHF/UHF applications and is housed in the SOT-23 surface mount package. This device is ideal for low-power surface mount applications.

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd