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FQB47P06TM-AM002 Image

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Mfr. #:
FQB47P06TM-AM002
Mfr.:
ON Semiconductor
Batch:
23+
Description:
This P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is used to reduce on-resistance, provide excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type P-channel
Drain Source Voltage (Vdss) 60V
Continuous Drain Current (Id) 47A
Power (Pd) 3.75W
On-resistance (RDS(on)@Vgs,Id) 26mΩ@10V,23.5A
Threshold Voltage (Vgs(th)@Id) 4V@250uA
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