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FQE10N20CTU Image

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Mfr. #:
FQE10N20CTU
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 200V
Continuous Drain Current (Id) 4A
Power (Pd) 12.8W
On-resistance (RDS(on)@Vgs,Id) 360mΩ@2A,10V
Threshold Voltage (Vgs(th)@Id) 4V@250uA
Gate Charge (Qg@Vgs) 26nC@10V
Input Capacitance (Ciss@Vds) 510pF@25V
Operating Temperature -55℃~ 150℃@(Tj)
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