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MJD127RLG Image

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Mfr. #:
MJD127RLG
Mfr.:
ON Semiconductor
Batch:
23+
Description:
This Darlington bipolar power transistor is suitable for general purpose amplifier and low speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices.
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Darlington Transistor
Type PNP
Collector-emitter breakdown voltage (Vceo) 100V
Collector current (Ic) 8A
Power (Pd) 1.75W
Collector cutoff current (Icbo@Vcb) 10uA
Collector-emitter saturation voltage ((VCE(sat)@Ic,Ib) 4V@8A,80mA
DC current gain (hFE@Vce,Ic) 1000@4V,4A
Characteristic frequency (fT) 4MHz
Operating temperature -65℃~ 150℃@(Tj)
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