MOC205M

This device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector in a small surface mount plastic package. It is suitable for high density applications without the need for through-board mounting.

MOC207VM

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector in a small surface mountable plastic package. They are ideal for high density applications and do not require circuit board mounting.

MOCD223VM

The MOCD223M consists of a Gallium Arsenide Infrared Emitting Diode optically coupled to a monolithic Silicon Photo Darlington Detector in a small surface mount plastic package. The MOCD223M is a dual channel version of the MOC223M. They are ideal for high density applications and do not require th

FOD2711AV

The FOD2711A optical isolation amplifier consists of the popular AZ431L precision programmed shunt reference and an optocoupler. The optocoupler is a gallium arsenide (GaAs) light emitting diode optically coupled to a silicon phototransistor. The reference voltage tolerance is 1%. The current trans

FOD2711A

The FOD2711A optical isolation amplifier consists of the popular AZ431L precision programmed shunt reference and an optocoupler. The optocoupler is a gallium arsenide (GaAs) light emitting diode optically coupled to a silicon phototransistor. The reference voltage tolerance is 1%. The current trans

MCT61SD

The MCT6X optocoupler has two channels for density applications. For quad channel applications, two packages are available to fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar phototransistor optically coupled to a GaAs light emitting diode.

CNY171TVM

The CNY17XM, CNY17FXM, and MOC810XM devices consist of a GaAs infrared emitting diode coupled to an NPN phototransistor in a dual in-line package.

CNY171VM

The CNY17XM, CNY17FXM, and MOC810XM devices consist of a GaAs infrared emitting diode coupled to an NPN phototransistor in a dual in-line package.