LOGO
LOGO
MMBD301LT3 Image

img for reference only

Mfr. #:
MMBD301LT3
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Diode - RF Schottky - Single 30V 200 mW SOT-23-3 (TO-236)
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Packaging Tape and Reel (TR)
Diode Type Schottky - Single
Voltage - Peak Reverse (max) 30V
Capacitance at different?Vr, F 1.5pF @ 15V, 1MHz
Resistance at different?If, F -
Power Dissipation (max) 200 mW
Operating Temperature -55°C ~ 125°C (TJ)
Package/Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Related models
  • FGA180N33ATDTU

    Trans IGBT Chip N-CH 330V 180A 3-Pin(3 Tab) TO-3P(N) Tube

  • FGPF15N60UNDF

    Trans IGBT Chip N-CH 600V 30A 3-Pin(3 Tab) TO-220F Tube

  • HGTG5N120BND

    Trans IGBT Chip N-CH 1.2KV 21A 3-Pin(3 Tab) TO-247 Rail

  • FGL60N100BNTDTU

    Trans IGBT Chip N-CH 1KV 60A 3-Pin(3 Tab) TO-264 Rail

  • AFGHL40T120RHD

    Transistor IGBT Chip N-Channel 1.2KV 48A 3-Pin TO?247 T/R

  • HGT1S10N120BNS

    Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2 Tab) TO-263AB Rail

  • FGA50T65SHD

    Trans IGBT Chip N-CH 650V 100A 3-Pin TO-3PN Tube

  • FGH40T120SMD

    Trans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Rail

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd