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HUF76629D3 Image

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Mfr. #:
HUF76629D3
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Through Hole N Channel 100 V 20A (Tc) 110W (Tc) I-PAK
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series UltraFET?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 20 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5 V, 10 V
On-Resistance (max) at different Id, Vgs 52 mOhm @ 20 A, 10 V
Vgs(th) (max) at different Id 3 V @ 250 μA
Gate Charge?(Qg) (max) at different Vgs 46 nC @ 10 V
Vgs (max) ±16 V
Various Vds Input Capacitance (Ciss) (max) 1285 pF @ 25 V
FET Function -
Power Dissipation (max) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package/Case TO-251-3 Short Lead, IPak, TO-251AA
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