HUF76629D3 ON | ON agency

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Mfr. #：

HUF76629D3

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Through Hole N Channel 100 V 20A (Tc) 110W (Tc) I-PAK

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	UltraFET?
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	100 V
Current at 25°C - Continuous Drain (Id)	20 A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5 V, 10 V
On-Resistance (max) at different Id, Vgs	52 mOhm @ 20 A, 10 V
Vgs(th) (max) at different Id	3 V @ 250 μA
Gate Charge?(Qg) (max) at different Vgs	46 nC @ 10 V
Vgs (max)	±16 V
Various Vds Input Capacitance (Ciss) (max)	1285 pF @ 25 V
FET Function	-
Power Dissipation (max)	110W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package/Case	TO-251-3 Short Lead, IPak, TO-251AA

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