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NVH4L050N65S3F Image

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Mfr. #:
NVH4L050N65S3F
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Through Hole N Channel 650 V 58A (Tc) 403W (Tc) TO-247-4L
Datasheet:
In Stock:
450
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series SuperFET? III, FRFET?
Package Tube
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 58A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 50 milliohms @ 29A, 10V
Vgs(th) (max) at Id 5V @ 1.7mA
Gate Charge?(Qg) (max) at Vgs 123.8 nC @ 10 V
Vgs (max) ±30V
Various Vds Input Capacitance (Ciss) (max) 4855 pF @ 400 V
FET Function -
Power Dissipation (max) 403W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
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