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MJD148T4G Image

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Mfr. #:
MJD148T4G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
The NPN Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog BJT
Transistor Type NPN
Collector-Emitter Breakdown Voltage(Vceo) 45V
Collector Current(Ic) 4A
Power(Pd) 1.75W
Collector Cutoff Current(Icbo) 20uA
Collector-Emitter Saturation Voltage(VCE(sat)@Ic,Ib) 500mV@2A,200mA
DC Current Gain(hFE@Ic,Vce) 85@500mA,1V
Characteristic Frequency(fT) 3MHz
Operating Temperature -55℃~ 150℃@(Tj)
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