MJD148T4G ON | ON agency

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Mfr. #：

MJD148T4G

Mfr.:

ON Semiconductor

Batch:

23+

Description:

The NPN Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Product Catalog	BJT
Transistor Type	NPN
Collector-Emitter Breakdown Voltage(Vceo)	45V
Collector Current(Ic)	4A
Power(Pd)	1.75W
Collector Cutoff Current(Icbo)	20uA
Collector-Emitter Saturation Voltage(VCE(sat)@Ic,Ib)	500mV@2A,200mA
DC Current Gain(hFE@Ic,Vce)	85@500mA,1V
Characteristic Frequency(fT)	3MHz
Operating Temperature	-55℃~ 150℃@(Tj)

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