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FQPF6N80CT Image

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Mfr. #:
FQPF6N80CT
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Through hole N channel 800 V 5.5A (Tc) 51W (Tc) TO-220F-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series QFET?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain Source Voltage (Vdss) 800 V
Current at 25°C - Continuous Drain (Id) 5.5A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On Resistance (max) at Id, Vgs 2.5 ohms @ 2.75A, 10V
Vgs(th) (max) at Id 5V @ 250μA
Gate Charge?(Qg) (max) at Vgs 30 nC @ 10 V
Vgs (max) ±30V
Various Vds Input Capacitance (Ciss) (Max) 1310 pF @ 25 V
FET Function -
Power Dissipation (Max) 51W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F-3
Package/Case TO-220-3 Full Package
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