FDMS4D0N12C ON | ON agency

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Mfr. #：

FDMS4D0N12C

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Surface mount N-channel 120 V 18.5A (Ta), 114A (Tc) 2.7W (Ta), 106W (Tc) 8-PQFN (5x6)

Datasheet:

In Stock:

4025

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	PowerTrench?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	120 V
Current at 25°C - Continuous Drain (Id)	18.5A (Ta), 114A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	6V, 10V
On-Resistance (Max) @ Id, Vgs	4 milliohms @ 67A, 10V
Vgs(th) (Max) @ Id	4V @ 370A
Gate Charge?(Qg) (Max) @ Vgs	82 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	6460 pF @ 60 V
FET function	-
Power dissipation (max)	2.7W (Ta), 106W (Tc)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Surface mount
Supplier device package	8-PQFN (5x6)
Package/case	8-PowerTDFN

FQPF2N30

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IRL610A

Through hole N channel 200 V 3.3A (Tc) 33W (Tc) TO-220-3
FQPF2N40

Through hole N channel 400 V 1.1A (Tc) 16W (Tc) TO-220F-3
FQPF7N10

Through hole N channel 100 V 5.5A (Tc) 23W (Tc) TO-220F-3
FQPF3P20

Through hole P channel 200 V 2.2A (Tc) 32W (Tc) TO-220F-3
FQD7N20TF

Surface mount N channel 200 V 5.3A (Tc) 2.5W (Ta), 45W (Tc) TO-252AA
FQPF1N50

Through hole N channel 500 V 900mA (Tc) 16W (Tc) TO-220F-3
FQD5P10TF

Surface mount type P channel 100 V 3.6A (Tc) 2.5W (Ta), 25W (Tc) TO-252AA