MCT5211SR2M

The MCT52XXM series includes a high efficiency AlGaAs infrared emitting diode coupled with an NPN phototransistor in a six-pin dual in-line package. The MCT52XXM is suitable for CMOS and LSTT/TTL interfaces and provides 250% CTR CE(SAT) with an LED input current of 1mA. It provides 1.6mA

4N36SM

This general purpose optocoupler consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a six-pin dual in-line package.

TIL111M

The MOC8100, TIL111, and TIL117 optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-lead dual-inline package.

QSE213C

L14N1

H11AA4SR2M

The H11AAXM series consists of two GaAs infrared emitting diodes connected in anti-phase parallel to drive a single silicon phototransistor output.

4N33SR2M

The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M feature a GaAs infrared emitting diode optically coupled to a silicon epitaxial planar photodarlington.

H11D1SR2M

The 4N38M, H11D1M, H11D3M and MOC8204M are all types of phototransistors coupled to an optical isolator. A GaAs infrared emitting diode is coupled to a high voltage NPN silicon photodiode. The device is available in a standard plastic 6-pin dual in-line package.