NSVMMUN2135LT1G ON | ON agency

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Mfr. #：

NSVMMUN2135LT1G

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)

Datasheet:

In Stock:

8840

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	Automotive, AEC-Q101
Packaging	Tape and Reel (TR)
Transistor Type	PNP - Pre-Bias
Current - Collector (Ic) (max)	100 mA
Voltage - Collector Emitter Breakdown (max)	50 V
Resistor - Base (R1)	2.2 kOhms
Resistor - Emitter (R2)	47 kOhms
DC Current Gain (hFE) (min) at Ic, Vce	80 @ 5mA, 10V
Vce Saturation Voltage Drop (max) at Ib, Ic	250mV @ 300μA, 10mA
Current - Collector Cutoff (max)	500nA
Power - max	246 mW
Mounting Type	Surface Mount
Package/Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3 (TO-236)

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